CONVERTING A BULK RADIATION-HARDENED BICMOS TECHNOLOGY INTO A DIELECTRICALLY-ISOLATED PROCESS

被引：4

作者：

DELAUS, M

EMILY, D

MAPPES, B

PEASE, R

机构：

[1] USN,CTR SURFACE WARFARE,CRANE,IN

[2] RLP RES INC,ALBUQUERQUE,NM

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1993年 / 40卷 / 06期

关键词：

D O I：

10.1109/23.273480

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Development of a dielectrically-isolated (DI) radiation-hardened BiCMOS process is reported. The process is fabricated on a bonded-wafer silicon-on-insulator (SOI) substrate and employs deep trenches for lateral device isolation.

引用

页码：1774 / 1779

页数：6