EFFECT OF ANNEALING ON THE OPTICAL GAP OF A-SI-H

被引:16
作者
DENEUVILLE, A
MINI, A
BRUYERE, JC
机构
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1981年 / 14卷 / 30期
关键词
D O I
10.1088/0022-3719/14/30/017
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:4531 / 4540
页数:10
相关论文
共 22 条
[1]  
BRUYERE JC, 1980, J APPL PHYS, V51, P2199, DOI 10.1063/1.327895
[2]  
CURRIE J, 1981, J PHYSIQUE LETT
[3]   OPTICAL-PROPERTIES OF REACTIVELY SPUTTERED A-SIHX FILMS [J].
DENEUFVILLE, JP ;
MOUSTAKAS, TD ;
RUPPERT, AF ;
LANFORD, WA .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :481-486
[4]   MATRIX CONTROLLED EQUILIBRIUM BETWEEN THE VARIOUS H-SITES IN ANNEALED SPUTTERED A-SI-H [J].
DENEUVILLE, A ;
BRUYERE, JC ;
MINI, A ;
KAHIL, H ;
DANIELOU, R ;
LIGEON, E .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (16) :2279-2296
[5]   HYDROGEN AND MATRIX EFFECT ON THE OPTICAL GAP OF SPUTTERED A-SI-H [J].
DENEUVILLE, A ;
BRUYERE, JC ;
MINI, A ;
KAHIL, H ;
DANIELOU, R ;
LIGEON, E .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :469-473
[6]  
FISH R, 1978, PHYS REV LETT, V41, P889
[7]   INFRARED VIBRATIONAL-SPECTRA OF RF-SPUTTERED HYDROGENATED AMORPHOUS SILICON [J].
FREEMAN, EC ;
PAUL, W .
PHYSICAL REVIEW B, 1978, 18 (08) :4288-4300
[8]  
FRITZSCHE H, 1977, 7TH P INT C AM LIQ S, P1
[9]   EFFECT OF SUBSTRATE-TEMPERATURE AND DEPOSITION RATE ON THE PHOTOCONDUCTIVITY OF SPUTTERED A-SI-H [J].
HAMDI, H ;
DENEUVILLE, A ;
BRUYERE, JC .
JOURNAL DE PHYSIQUE LETTRES, 1980, 41 (20) :L483-L486
[10]   GEOMETRY-DEPENDENT SI(2P) SURFACE CORE-LEVEL EXCITATIONS FOR SI(111) AND SI(100) SURFACES [J].
HIMPSEL, FJ ;
HEIMANN, P ;
CHIANG, TC ;
EASTMAN, DE .
PHYSICAL REVIEW LETTERS, 1980, 45 (13) :1112-1115