PROFILING WITH A GAAS LASER DIODE RADAR

被引：3

作者：

HANSEN, JP

机构：

[1] U.S. Naval Research Lab., Washington, D.C.

来源：

PROCEEDINGS OF THE IEEE | 1969年 / 57卷 / 05期

关键词：

D O I：

10.1109/PROC.1969.7123

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A GaAs laser radar system is described which can produce incremental range profiles with a precision better than ± 7.5 cm (±3 inches). The system employs a pulsed room-temperature GaAs injection laser, a photomultiplier tube, and a sampling oscilloscope with a digital readout. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：854 / &