GROWTH-KINETICS OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS/AL0.3GA0.7AS (100) NORMAL AND INVERTED INTERFACES IN THIN SINGLE QUANTUM-WELL STRUCTURES EXAMINED VIA PHOTOLUMINESCENCE STUDIES

被引：17

作者：

VOILLOT, F ^{[1
]}

MADHUKAR, A ^{[1
]}

TANG, WC ^{[1
]}

THOMSEN, M ^{[1
]}

KIM, JY ^{[1
]}

CHEN, P ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90089

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 04期

关键词：

D O I：

10.1063/1.97659

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：194 / 196

页数：3

共 19 条

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[3] Chen P., UNPUB
[4] PHOTOLUMINESCENCE FROM ALGAAS-GAAS SINGLE QUENTUM WELLS WITH GROWTH INTERRUPTED HETEROINTERFACES GROWN BY MOLECULAR-BEAM EPITAXY
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[5] MONTE-CARLO SIMULATIONS OF MBE GROWTH OF III-V SEMICONDUCTORS - THE GROWTH-KINETICS, MECHANISM, AND CONSEQUENCES FOR THE DYNAMICS OF RHEED INTENSITY
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 540 - 546
[6] ROLE OF SURFACE MOLECULAR REACTIONS IN INFLUENCING THE GROWTH-MECHANISM AND THE NATURE OF NONEQUILIBRIUM SURFACES - A MONTE-CARLO STUDY OF MOLECULAR-BEAM EPITAXY
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[7] MOLECULAR-BEAM EPITAXIAL-GROWTH AND TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF THIN GAAS/INAS(100) MULTIPLE QUANTUM WELL STRUCTURES
GRUNTHANER, FJ
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FERNANDEZ, R
LEE, TC
MADHUKAR, A
LEWIS, BF
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 983 - 985
[8] INTERFACE DISORDER IN GAAS/ALGAAS QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY AT HIGH SUBSTRATE-TEMPERATURE
HAYAKAWA, T
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[J]. APPLIED PHYSICS LETTERS, 1985, 47 (09) : 952 - 954
[9] KIM JY, 1986, J ELECTRON MATER, V15, P317
[10] DYNAMIC EFFECTS IN RHEED FROM MBE GROWN GAAS(001) SURFACES
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ZHANG, J
[J]. SURFACE SCIENCE, 1986, 169 (01) : 176 - 196

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