DIAMOND-LIKE AMORPHOUS-CARBON FILMS PREPARED BY RF-SPUTTERING IN ARGON

被引:13
作者
ULLMANN, J
SCHMIDT, G
SCHARFF, W
机构
[1] Chemnitz University of Technology, Department of Physics, O- 9010 Chemnitz, Reichenhainer Str. 70
关键词
D O I
10.1016/0040-6090(92)90452-H
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In depositing thin carbon by the r.f. sputtering of a graphite target in argon, an optimal parameter window was found in which it is possible to prepare adherent, IR-transparent. insulating, hard layers. Approximations for the sputtering process (total sputtering yield, energy of the sputtered carbon particles on the substrate) are demonstrated. A characteristic dependence of the film properties on the target voltage, an essential sputtering parameter, exists. In all cases, the target voltage influences the bombardment of the growing film by charged energetic particles. An anisotropic layer behaviour was established for more strongly absorbing films by three different methods of investigation. Finally, preliminary considerations concerning the film structure were made.
引用
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页码:35 / 43
页数:9
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