THE LUMINESCENCE BEHAVIOR OF POROUS SILICON LAYERS

The excitation and emission spectra together with decay kinetics and luminescence degradation curves have been measured in porous silicon layers prepared by electrochemical anodization. The degradation of luminescence depending on wavelength and excitation light intensity was observed for uncovered porous silicon layers. The decay of luminescence is non-exponential with the mean lifetime of about 3 mus. Strong luminescence in the visible range of spectra at room temperature was obtained in powder and scale-like samples arising during the preparation of porous silicon layers.