SECONDARY DEFECTS IN PHOSPHORUS-IMPLANTED SILICON

被引：45

作者：

TAMURA, M ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO,JAPAN

来源：

关键词：

D O I：

10.1063/1.1654779

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：651 / 653

页数：3

共 13 条

[1]

Bicknell R. W., 1970, Radiation Effects, V6, P45, DOI 10.1080/00337577008235044

[2] ANNEALING CHARACTERISTICS OF PHOSPHORUS IMPLANTED SILICON .1. [J].

BICKNELL, RW .

PHILOSOPHICAL MAGAZINE, 1972, 26 (02) :273-&

[3]

BICKNELL RW, 1970, P EUROPEAN C ION IMP, P57

[4]

CHADDERTON LT, 1971, ION IMPLANTATION

[5]

Davidson S. M., 1970, Radiation Effects, V6, P33, DOI 10.1080/00337577008235043

[6]

DAVIDSON SM, 1970, P EUROPEAN C ION IMP, P238

EYRE, BL ;

MAHER, DM ;

BARTLETT, AF .

PHILOSOPHICAL MAGAZINE, 1971, 23 (182) :439-&

[8]

HIRSCH PB, 1965, ELECTRON MICROSCOPY

[9]

Mayer J. W., 1970, ION IMPLANTATION SEM

[10]

TAMURA M, 1971, 2ND P C SOL STAT DEV, P9