SERIES OPERATION OF POWER MOSFETS FOR HIGH-SPEED, HIGH-VOLTAGE SWITCHING APPLICATIONS

被引:24
作者
BAKER, RJ
JOHNSON, BP
机构
关键词
D O I
10.1063/1.1144043
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Series operation of power metal-oxide semiconductor field-effect transistors (MOSFETs) to increase their effective hold off voltage is described. The design procedure presented is a modification of a recently reported [Baker and Johnson, Rev. Sci. Instrum. 63, 5799 (1992)] method. Comments are made on implementing MOSFET stacks in various types of instrumentation.
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页码:1655 / 1656
页数:2
相关论文
共 4 条
[1]   STACKING POWER MOSFETS FOR USE IN HIGH-SPEED INSTRUMENTATION [J].
BAKER, RJ ;
JOHNSON, BP .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1992, 63 (12) :5799-5801
[2]   HIGH-VOLTAGE, FULL-FLOATING 10-MHZ SQUARE-WAVE GENERATOR WITH PHASE-CONTROL [J].
BERNIUS, MT ;
CHUTJIAN, A .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1989, 60 (04) :779-782
[3]   IMPROVED HIGH-VOLTAGE, HIGH-FREQUENCY SQUARE-WAVE GENERATOR [J].
BERNIUS, MT ;
CHUTJIAN, A .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1990, 61 (02) :925-927
[4]   FAST 8-KV METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR SWITCH [J].
CONTINETTI, RE ;
CYR, DR ;
NEUMARK, DM .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1992, 63 (02) :1840-1841