STRESS-INDUCED DARK LINE DEFECT FORMATION IN GAALAS-SI LEDS

被引：14

作者：

CHIN, AK

KING, WC

LEONARD, TJ

ROEDEL, RJ

ZIPFEL, CL

KERAMIDAS, VG

ERMANIS, F

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 03期

关键词：

D O I：

10.1149/1.2127477

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：661 / 669

页数：9

共 23 条

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[4]

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[8]

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[9] NATURE OF (110) DARK-LINE DEFECTS IN DEGRADED (GAAL)AS-GAAS DOUBLE-HETEROSTRUCTURE LASERS [J].

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[10] OBSERVATION OF DARK LINE DEFECTS IN GAP GREEN LEDS UNDER AN EXTERNAL UNIAXIAL STRESS [J].

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