HIGH-EFFICIENCY GRADED BAND-GAP GA1-XALXAS LIGHT-EMITTING-DIODES

被引：28

作者：

DAWSON, LR ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

关键词：

D O I：

10.1063/1.324013

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2485 / 2492

页数：8

共 19 条

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[2] LIGHT-EMITTING DIODES
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DEAN, PJ
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[3] BUSOV VM, 1975, SOV PHYS SEMICOND+, V8, P1221
[4] COMPOSITION DEPENDENCE OF GA1-XALXAS DIRECT AND INDIRECT ENERGY GAPS
CASEY, HC
PANISH, MB
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) : 4910 - &
[5] DASH WC, 1955, PHYS REV, V99, P1152
[6] NEAR-EQUILIBRIUM LPE GROWTH OF GAAS-GA1-XALXAS DOUBLE HETEROSTRUCTURES
DAWSON, LR
[J]. JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) : 86 - 96
[7] DUBROVSKAYA NS, 1970, SOV PHYS SEMICOND+, V3, P1537
[8] INFRARED TRANSMISSION + FLUORESCENCE OF DOPED GALLIUM ARSENIDE
HILL, DE
[J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (3A): : A866 - &
[9] PROPERTIES OF EFFICIENT SILICON-COMPENSATED ALXGA1-XAS ELECTROLUMINESCENT DIODES
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HAWRYLO, FZ
ALMELEH, N
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (05) : 2248 - &
[10] LUMINESCENCE IN SILICON-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY
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HAWRYLO, FZ
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) : 2006 - &