NEAR-EQUILIBRIUM LPE GROWTH OF GAAS-GA1-XALXAS DOUBLE HETEROSTRUCTURES

被引：59

作者：

DAWSON, LR ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF CRYSTAL GROWTH | 1974年 / 27卷 / DEC期

关键词：

D O I：

10.1016/0022-0248(74)90421-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：86 / 96

页数：11

相关论文

共 16 条

[1] THERMAL-CONDUCTIVITY OF GA1-XALXAS ALLOYS
AFROMOWITZ, MA
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) : 1292 - 1294
[2] AFROMOWITZ MA, PRIVATE COMMUNICATIO
[3] Alferov Z. I., 1969, KRIST TECH, V4, P495
[4] GROWTH OF UNIFORM EPITAXIAL LAYERS BY LIQUID-PHASE-EPITAXIAL METHOD
BLUM, JM
SHIH, KK
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) : 1394 - &
[5] GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE INJECTION LASERS
HAYASHI, I
PANISH, MB
REINHART, FK
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 1929 - &
[6] A LOW-THRESHOLD ROOM-TEMPERATURE INJECTION LASER
HAYASHI, I
PANISH, MB
FOY, PW
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1969, QE 5 (04) : 211 - &
[7] JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE
HAYASHI, I
PANISH, MB
FOY, PW
SUMSKI, S
[J]. APPLIED PHYSICS LETTERS, 1970, 17 (03) : 109 - &
[8] THIN SOLUTION MULTIPLE LAYER EPITAXY
LOCKWOOD, HF
ETTENBERG, M
[J]. JOURNAL OF CRYSTAL GROWTH, 1972, 15 (01) : 81 - +
[9] HIGHLY UNIFORM ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS AND THEIR CHARACTERISTICS AT ROOM TEMPERATURE
MILLER, BI
PINKAS, E
HAYASHI, I
FOY, PW
CAPIK, R
[J]. APPLIED PHYSICS LETTERS, 1971, 19 (09) : 340 - &
[10] Minden H. T., 1970, Journal of Crystal Growth, V6, P228, DOI 10.1016/0022-0248(70)90071-0