JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE

被引：444

作者：

HAYASHI, I

PANISH, MB

FOY, PW

SUMSKI, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1970年 / 17卷 / 03期

关键词：

D O I：

10.1063/1.1653326

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：109 / &

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[1] CONTINUOUS OPERATION OF GAAS JUNCTION LASERS ON DIAMOND HEAT SINKS AT 200 DEGREES K
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[6] DOUBLE-HETEROSTRUCTURE INJECTION LASERS WITH ROOM-TEMPERATURE THRESHOLDS AS LOW AS 2300 A/CM2
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[9] SOLOMON R, 1968, 2ND P INT S GAAS, P11
[10] SILICON-DOPED GALLIUM ARSENIDE GROWN FROM GALLIUM SOLUTION - SILICON SITE DISTRIBUTION
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