SOLID SOLUBILITY LIMITS OF ZINC IN GAAS AT 1000 DEGREES

[1] ARTHUR JR, IN PRESS

[2] BAGAEV VS, 1965, RADIATIVE RECOMBINAT, P149

[3] JUNCTION POTENTIAL STUDIES IN TUNNEL DIODES [J]. PHYSICAL REVIEW, 1963, 131 (02): : 627 - &

[4] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, pCH1

[5] Castaing R, 1960, ADV ELECTRONICS ELEC, V13, P317, DOI [DOI 10.1016/S0065-2539(08)60212-7, 10.1016/S0065-2539(08)60212-7]

[6] SOLUBILITIES + DISTRIBUTION COEFFICIENTS OF ZN IN GAAS + GAP [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (01) : 23 - &

[7] DUNLAP WC, 1957, INTRODUCTION SEMICON, P65

[8] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J]. PHYSICAL REVIEW, 1960, 120 (06): : 1951 - 1963

[9] HALL EFFECT AND RESISTIVITY OF ZN-DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (05) : 1963 - &

[10] DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 379 - &

[1] ARTHUR JR, IN PRESS

[2] BAGAEV VS, 1965, RADIATIVE RECOMBINAT, P149

[3] JUNCTION POTENTIAL STUDIES IN TUNNEL DIODES [J]. PHYSICAL REVIEW, 1963, 131 (02): : 627 - &

[4] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, pCH1

[5] Castaing R, 1960, ADV ELECTRONICS ELEC, V13, P317, DOI [DOI 10.1016/S0065-2539(08)60212-7, 10.1016/S0065-2539(08)60212-7]

[6] SOLUBILITIES + DISTRIBUTION COEFFICIENTS OF ZN IN GAAS + GAP [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (01) : 23 - &

[7] DUNLAP WC, 1957, INTRODUCTION SEMICON, P65

[8] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J]. PHYSICAL REVIEW, 1960, 120 (06): : 1951 - 1963

[9] HALL EFFECT AND RESISTIVITY OF ZN-DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (05) : 1963 - &

[10] DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 379 - &