HALL EFFECT AND RESISTIVITY OF ZN-DOPED GAAS

[1] [Anonymous], [No title captured]

[2] PROPERTIES OF HIGH-RESISTIVITY GALLIUM ARSENIDE COMPENSATED WITH DIFFUSED COPPER [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (09) : 1666 - &

[3] BEHAVIOR OF LATTICE DEFECTS IN GAAS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (02) : 225 - &

[4] BOLTAKS BI, 1964, FIZ TVERD TELA, V6, P1511

[5] DIFFUSION MECHANISM OF ZN IN GAAS + GAP BASED ON ISOCONCENTRATION DIFFUSION EXPERIMENTS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) : 1960 - &

[6] HALL EFFECT STUDIES OF DOPED ZINC OXIDE SINGLE CRYSTALS [J]. PHYSICAL REVIEW, 1957, 108 (02): : 222 - 230

[7] KITOVSKII NA, 1963, SOV PHYS-SOL STATE, V4, P2088

[8] RAPID ZINC DIFFUSION IN GALLIUM ARSENIDE [J]. SOLID-STATE ELECTRONICS, 1962, 5 (MAY-J) : 127 - 130

[9] RADIATIVE RECOMBINATION THROUGH IMPURITY LEVELS IN GAAS P-N JUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1963, 3 (05) : 71 - 72

[10] SOLUBILITY OF ZINC IN GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) : 1748 - &

[1] [Anonymous], [No title captured]

[2] PROPERTIES OF HIGH-RESISTIVITY GALLIUM ARSENIDE COMPENSATED WITH DIFFUSED COPPER [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (09) : 1666 - &

[3] BEHAVIOR OF LATTICE DEFECTS IN GAAS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (02) : 225 - &

[4] BOLTAKS BI, 1964, FIZ TVERD TELA, V6, P1511

[5] DIFFUSION MECHANISM OF ZN IN GAAS + GAP BASED ON ISOCONCENTRATION DIFFUSION EXPERIMENTS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) : 1960 - &

[6] HALL EFFECT STUDIES OF DOPED ZINC OXIDE SINGLE CRYSTALS [J]. PHYSICAL REVIEW, 1957, 108 (02): : 222 - 230

[7] KITOVSKII NA, 1963, SOV PHYS-SOL STATE, V4, P2088

[8] RAPID ZINC DIFFUSION IN GALLIUM ARSENIDE [J]. SOLID-STATE ELECTRONICS, 1962, 5 (MAY-J) : 127 - 130

[9] RADIATIVE RECOMBINATION THROUGH IMPURITY LEVELS IN GAAS P-N JUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1963, 3 (05) : 71 - 72

[10] SOLUBILITY OF ZINC IN GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) : 1748 - &