RADIATIVE RECOMBINATION THROUGH IMPURITY LEVELS IN GAAS P-N JUNCTIONS

[1] COHERENT LIGHT EMISSION FROM GAAS JUNCTIONS [J]. PHYSICAL REVIEW LETTERS, 1962, 9 (09) : 366 - &

[2] HALL RN, 1963, B AM PHYS SOC, V11, P191

[3] HILSUM C, 1961, SEMICONDUCTING, V3, P75

[4] KEYES RJ, 1962, P IRE, V50, P1822

[5] STIMULATED EMISSION OF RADIATION FROM GAAS P-N JUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1962, 1 (03) : 62 - 64

[6] BAND-FILLING MODEL FOR GAAS INJECTION LUMINESCENCE [J]. APPLIED PHYSICS LETTERS, 1963, 2 (09) : 182 - 184

[7] PANKOVE JI, 1962, EL SOC EL DIV ABSTR, V2, P71

[8] PUTLEY EH, 1958, RRE1512 MEM

[9] SEMICONDUCTOR MASER OF GAAS [J]. APPLIED PHYSICS LETTERS, 1962, 1 (04) : 91 - 92

[10] IMPURITY BAND IN SEMICONDUCTORS WITH SMALL EFFECTIVE MASS [J]. PHYSICAL REVIEW, 1955, 100 (06): : 1638 - 1643

[1] COHERENT LIGHT EMISSION FROM GAAS JUNCTIONS [J]. PHYSICAL REVIEW LETTERS, 1962, 9 (09) : 366 - &

[2] HALL RN, 1963, B AM PHYS SOC, V11, P191

[3] HILSUM C, 1961, SEMICONDUCTING, V3, P75

[4] KEYES RJ, 1962, P IRE, V50, P1822

[5] STIMULATED EMISSION OF RADIATION FROM GAAS P-N JUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1962, 1 (03) : 62 - 64

[6] BAND-FILLING MODEL FOR GAAS INJECTION LUMINESCENCE [J]. APPLIED PHYSICS LETTERS, 1963, 2 (09) : 182 - 184

[7] PANKOVE JI, 1962, EL SOC EL DIV ABSTR, V2, P71

[8] PUTLEY EH, 1958, RRE1512 MEM

[9] SEMICONDUCTOR MASER OF GAAS [J]. APPLIED PHYSICS LETTERS, 1962, 1 (04) : 91 - 92

[10] IMPURITY BAND IN SEMICONDUCTORS WITH SMALL EFFECTIVE MASS [J]. PHYSICAL REVIEW, 1955, 100 (06): : 1638 - 1643