BAND-FILLING MODEL FOR GAAS INJECTION LUMINESCENCE

被引：114

作者：

NELSON, DF

GERSHENZON, M

ASHKIN, A

机构：

来源：

APPLIED PHYSICS LETTERS | 1963年 / 2卷 / 09期

关键词：

D O I：

10.1063/1.1753835

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：182 / 184

页数：3

共 12 条

[1]

GERSHENZON M, 1962, B AM PHYS SOC, V8, P202

[2] COHERENT LIGHT EMISSION FROM GAAS JUNCTIONS [J].

HALL, RN ;

CARLSON, RO ;

SOLTYS, TJ ;

FENNER, GE ;

KINGSLEY, JD .

PHYSICAL REVIEW LETTERS, 1962, 9 (09) :366-&

[3]

KANE EK, COMMUNICATION

[4]

KANE EO, UNPUB PHYS REV

[5]

LEITE RP, UNPUB

[6]

LUCOVSKY G, 1962, B AM PHYS SOC, V8, P110

[7] DETERMINATION OF THE ACTIVE REGION IN LIGHT-EMITTING GAAS DIODES [J].

MICHEL, AE ;

WALKER, EJ ;

NATHAN, MI .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1963, 7 (01) :70-71

[8] STIMULATED EMISSION OF RADIATION FROM GAAS P-N JUNCTIONS [J].

NATHAN, MI ;

DUMKE, WP ;

BURNS, G ;

DILL, FH ;

LASHER, G .

APPLIED PHYSICS LETTERS, 1962, 1 (03) :62-64

[9] RECOMBINATION RADIATION IN GAAS BY OPTICAL AND ELECTRICAL INJECTION [J].

NATHAN, MI ;

BURNS, G .

APPLIED PHYSICS LETTERS, 1962, 1 (04) :89-90

[10] TUNNELING-ASSISTED PHOTON EMISSION IN GALLIUM ARSENIDE PN JUNCTIONS [J].

PANKOVE, JI .

PHYSICAL REVIEW LETTERS, 1962, 9 (07) :283-&

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