TUNNELING-ASSISTED PHOTON EMISSION IN GALLIUM ARSENIDE PN JUNCTIONS

[1] AIGRAIN P, PRIVATE COMMUNICATIO

[2] FRANZ W, 1958, Z NATURFORSCH PT A, V13, P484

[3] KELDYSH LV, 1958, SOV PHYS JETP, V34, P665

[4] KELDYSH LV, 1961, 1960 P INT C SEM PHY, P824

[5] OPTICAL ABSORPTION EDGE IN GAAS AND ITS DEPENDENCE ON ELECTRIC FIELD [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 : 2136 - &

[6] PANKOVE JI, 1961, ANN PHYS-PARIS, V6, P331

[7] PANKOVE JI, 1962, B AM PHYS SOC, V7, P88

[8] PANKOVE JI, 1962, J ELECTROCHEM SOC, V11, P71

[9] DEGENERATE GERMANIUM .2. BAND GAP AND CARRIER RECOMBINATION [J]. PHYSICAL REVIEW, 1961, 124 (04): : 1101 - &

[10] EFFECT OF A HIGH ELECTRIC FIELD ON ABSORPTION OF LIGHT BY PBI2 AND HGI2 [J]. PHYSICAL REVIEW, 1962, 126 (02): : 442 - &

[1] AIGRAIN P, PRIVATE COMMUNICATIO

[2] FRANZ W, 1958, Z NATURFORSCH PT A, V13, P484

[3] KELDYSH LV, 1958, SOV PHYS JETP, V34, P665

[4] KELDYSH LV, 1961, 1960 P INT C SEM PHY, P824

[5] OPTICAL ABSORPTION EDGE IN GAAS AND ITS DEPENDENCE ON ELECTRIC FIELD [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 : 2136 - &

[6] PANKOVE JI, 1961, ANN PHYS-PARIS, V6, P331

[7] PANKOVE JI, 1962, B AM PHYS SOC, V7, P88

[8] PANKOVE JI, 1962, J ELECTROCHEM SOC, V11, P71

[9] DEGENERATE GERMANIUM .2. BAND GAP AND CARRIER RECOMBINATION [J]. PHYSICAL REVIEW, 1961, 124 (04): : 1101 - &

[10] EFFECT OF A HIGH ELECTRIC FIELD ON ABSORPTION OF LIGHT BY PBI2 AND HGI2 [J]. PHYSICAL REVIEW, 1962, 126 (02): : 442 - &