DEGENERATE GERMANIUM .2. BAND GAP AND CARRIER RECOMBINATION

被引：42

作者：

SOMMERS, HS

机构：

来源：

PHYSICAL REVIEW | 1961年 / 124卷 / 04期

关键词：

D O I：

10.1103/PhysRev.124.1101

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1101 / &

共 27 条

[1] ALEKSEEVA VG, 1957, SOV PHYS-TECH PHYS, V2, P1794
[2] ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB
BURSTEIN, E
[J]. PHYSICAL REVIEW, 1954, 93 (03): : 632 - 633
[3] EFFECT OF TEMPERATURE AND DOPING ON REFLECTIVITY OF GERMANIUM IN FUNDAMENTAL ABSORPTION REGION
CARDONA, M
SOMMERS, HS
[J]. PHYSICAL REVIEW, 1961, 122 (05): : 1382 - &
[4] EXCESS TUNNEL CURRENT IN SILICON ESAKI JUNCTIONS
CHYNOWETH, A
LOGAN, RA
FELDMANN, WL
[J]. PHYSICAL REVIEW, 1961, 121 (03): : 684 - &
[5] INTERNAL FIELD EMISSION AT NARROW SILICON AND GERMANIUM P-N JUNCTIONS
CHYNOWETH, AG
FELDMANN, WL
LEE, CA
LOGAN, RA
PEARSON, GL
AIGRAIN, P
[J]. PHYSICAL REVIEW, 1960, 118 (02): : 425 - 434
[6] NEW PHENOMENON IN NARROW GERMANIUM PARA-NORMAL-JUNCTIONS
ESAKI, L
[J]. PHYSICAL REVIEW, 1958, 109 (02): : 603 - 604
[7] FRANZ W, 1958, Z NATURFORSCH, V13A, P484
[8] THE ELECTRONIC ENERGY BAND STRUCTURE OF SILICON AND GERMANIUM
HERMAN, F
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1955, 43 (12): : 1703 - 1732
[9] THEORY OF TUNNELING
KANE, EO
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (01) : 83 - +
[10] KELDYSH LV, 1960, P INTERN C SEMICOND, P824