INTERNAL FIELD EMISSION AT NARROW SILICON AND GERMANIUM P-N JUNCTIONS

[1] AIGRAIN P, COMMUNICATION

[2] BACKENSTOSS G, 1957, PHYS REV, V108, P416

[3] THRESHOLD ENERGY FOR ELECTRON-HOLE PAIR-PRODUCTION BY ELECTRONS IN SILICON [J]. PHYSICAL REVIEW, 1957, 108 (01): : 29 - 34

[4] EFFECT OF DISLOCATIONS ON BREAKDOWN IN SILICON P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (07) : 1103 - 1110

[5] INTERNAL FIELD EMISSION IN SILICON P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1957, 106 (03): : 418 - 426

[6] NEW PHENOMENON IN NARROW GERMANIUM PARA-NORMAL-JUNCTIONS [J]. PHYSICAL REVIEW, 1958, 109 (02): : 603 - 604

[7] ESAKI L, COMMUNICATION

[8] FRANZ W, 1956, HDB PHYSIK, V17, P155

[9] HAYNES J, COMMUNICATION

[10] THE ELECTRONIC ENERGY BAND STRUCTURE OF SILICON AND GERMANIUM [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1955, 43 (12): : 1703 - 1732

[1] AIGRAIN P, COMMUNICATION

[2] BACKENSTOSS G, 1957, PHYS REV, V108, P416

[3] THRESHOLD ENERGY FOR ELECTRON-HOLE PAIR-PRODUCTION BY ELECTRONS IN SILICON [J]. PHYSICAL REVIEW, 1957, 108 (01): : 29 - 34

[4] EFFECT OF DISLOCATIONS ON BREAKDOWN IN SILICON P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (07) : 1103 - 1110

[5] INTERNAL FIELD EMISSION IN SILICON P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1957, 106 (03): : 418 - 426

[6] NEW PHENOMENON IN NARROW GERMANIUM PARA-NORMAL-JUNCTIONS [J]. PHYSICAL REVIEW, 1958, 109 (02): : 603 - 604

[7] ESAKI L, COMMUNICATION

[8] FRANZ W, 1956, HDB PHYSIK, V17, P155

[9] HAYNES J, COMMUNICATION

[10] THE ELECTRONIC ENERGY BAND STRUCTURE OF SILICON AND GERMANIUM [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1955, 43 (12): : 1703 - 1732