EFFECT OF DISLOCATIONS ON BREAKDOWN IN SILICON P-N JUNCTIONS

被引：168

作者：

CHYNOWETH, AG

PEARSON, GL

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1958年 / 29卷 / 07期

关键词：

D O I：

10.1063/1.1723368

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1103 / 1110

页数：8

共 14 条

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[10]

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