PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON

[1] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[2] HAYNES JR, 1952, PHYS REV, V86, P647

[3] AVALANCHE BREAKDOWN IN SILICON [J]. PHYSICAL REVIEW, 1954, 94 (04): : 877 - 884

[4] NEWMAN, 1955, PHYS REV, V98, P1536

[5] VISIBLE LIGHT FROM A SILICON P-N JUNCTION [J]. PHYSICAL REVIEW, 1955, 100 (02): : 700 - 703

[6] ROSE DJ, 1955, PHYS REV, V99, P1648

[7] ROSE DJ, UNPUBLISHED

[8] THEORY OF ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1954, 95 (06): : 1415 - 1420

[1] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[2] HAYNES JR, 1952, PHYS REV, V86, P647

[3] AVALANCHE BREAKDOWN IN SILICON [J]. PHYSICAL REVIEW, 1954, 94 (04): : 877 - 884

[4] NEWMAN, 1955, PHYS REV, V98, P1536

[5] VISIBLE LIGHT FROM A SILICON P-N JUNCTION [J]. PHYSICAL REVIEW, 1955, 100 (02): : 700 - 703

[6] ROSE DJ, 1955, PHYS REV, V99, P1648

[7] ROSE DJ, UNPUBLISHED

[8] THEORY OF ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1954, 95 (06): : 1415 - 1420