AVALANCHE BREAKDOWN IN SILICON

[1] LOEB LB, 1939, FUNDAMENTAL PROCESSE, P372

[2] MCAFEE, 1951, PHYS REV, V83, P650

[3] ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1953, 91 (05): : 1079 - 1084

[4] SILICON P-N-JUNCTION ALLOY DIODES [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1348 - 1351

[5] SHOCKLEY W, 1949, BELL SYS TECH J, V28, P449

[6] TITCHMARSH EC, 1948, THEORY FOURIER INTEG, P331

[7] Whitehead S., 1951, DIELECTRIC BREAKDOWN

[8] WILSON DK, 1953, UNPUB JUL I RAD ENG

[1] LOEB LB, 1939, FUNDAMENTAL PROCESSE, P372

[2] MCAFEE, 1951, PHYS REV, V83, P650

[3] ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1953, 91 (05): : 1079 - 1084

[4] SILICON P-N-JUNCTION ALLOY DIODES [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1348 - 1351

[5] SHOCKLEY W, 1949, BELL SYS TECH J, V28, P449

[6] TITCHMARSH EC, 1948, THEORY FOURIER INTEG, P331

[7] Whitehead S., 1951, DIELECTRIC BREAKDOWN

[8] WILSON DK, 1953, UNPUB JUL I RAD ENG