IONIZATION RATES FOR ELECTRONS AND HOLES IN SILICON

被引：454

作者：

CHYNOWETH, AG

机构：

来源：

PHYSICAL REVIEW | 1958年 / 109卷 / 05期

关键词：

D O I：

10.1103/PhysRev.109.1537

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1537 / 1540

页数：4

共 8 条

CHYNOWETH, AG ;

MCKAY, KG .

PHYSICAL REVIEW, 1957, 108 (01) :29-34

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[3]

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MCAFEE, KB .

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[6] IONIZATION RATES FOR HOLES AND ELECTRONS IN SILICON [J].

MILLER, SL .

PHYSICAL REVIEW, 1957, 105 (04) :1246-1249

[7] TOWNSEND IONIZATION COEFFICIENT FOR HYDROGEN AND DEUTERIUM [J].

ROSE, DJ .

PHYSICAL REVIEW, 1956, 104 (02) :273-277

[8] THEORY OF ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM [J].

WOLFF, PA .

PHYSICAL REVIEW, 1954, 95 (06) :1415-1420