THRESHOLD ENERGY FOR ELECTRON-HOLE PAIR-PRODUCTION BY ELECTRONS IN SILICON

被引：78

作者：

CHYNOWETH, AG

MCKAY, KG

机构：

来源：

PHYSICAL REVIEW | 1957年 / 108卷 / 01期

关键词：

D O I：

10.1103/PhysRev.108.29

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：29 / 34

页数：6

共 8 条

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MCKAY, KG ;

MCAFEE, KB .

PHYSICAL REVIEW, 1953, 91 (05) :1079-1084

[5] IONIZATION RATES FOR HOLES AND ELECTRONS IN SILICON [J].

MILLER, SL .

PHYSICAL REVIEW, 1957, 105 (04) :1246-1249

[6] MOBILITY OF HOLES AND ELECTRONS IN HIGH ELECTRIC FIELDS [J].

RYDER, EJ .

PHYSICAL REVIEW, 1953, 90 (05) :766-769

[7]

RYDER EJ, COMMUNICATION

[8] THEORY OF ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM [J].

WOLFF, PA .

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