ANISOTROPY OF THE HOT-ELECTRON PROBLEM IN SEMICONDUCTORS WITH SPHEROIDAL ENERGY SURFACES

被引：15

作者：

GOLD, L

机构：

来源：

PHYSICAL REVIEW | 1956年 / 104卷 / 06期

关键词：

D O I：

10.1103/PhysRev.104.1580

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1580 / 1584

页数：5

共 9 条

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GOLD, L
ROTH, LM
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[3] HAM FS, 1955, PHYS REV A, V100, P1656
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SHOCKLEY, W
[J]. PHYSICAL REVIEW, 1949, 75 (04): : 691 - 691
[6] SIMULTANEOUS TRANSPORT OF HEAVY AND LIGHT HOLES IN SEMICONDUCTORS WITH A DEGENERATE VALENCE BAND
RITTNER, ES
[J]. PHYSICAL REVIEW, 1956, 101 (04): : 1291 - 1294
[7] SCLAR, 1953, PHYS REV, V92, pA858
[8] HOT ELECTRON PROBLEM IN SEMICONDUCTORS WITH SPHEROIDAL ENERGY SURFACES
SHIBUYA, M
[J]. PHYSICAL REVIEW, 1955, 99 (04): : 1189 - 1191
[9] HOT ELECTRONS IN GERMANIUM AND OHMS LAW
SHOCKLEY, W
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1951, 30 (04): : 990 - 1034