MOBILITY OF HOLES AND ELECTRONS IN HIGH ELECTRIC FIELDS

被引：333

作者：

RYDER, EJ

机构：

来源：

PHYSICAL REVIEW | 1953年 / 90卷 / 05期

关键词：

D O I：

10.1103/PhysRev.90.766

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：766 / 769

页数：4

共 11 条

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[2]

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[3] HIGH FIELD MOBILITY IN GERMANIUM WITH IMPURITY SCATTERING DOMINANT [J].

CONWELL, EM .

PHYSICAL REVIEW, 1953, 90 (05) :769-772

[4] THE MOBILITY AND LIFE OF INJECTED HOLES AND ELECTRONS IN GERMANIUM [J].

HAYNES, JR ;

SHOCKLEY, W .

PHYSICAL REVIEW, 1951, 81 (05) :835-843

[5]

MCAFEE, 1951, PHYS REV, V83, P650

[6] MEASUREMENT OF THE ELASTIC CONSTANTS OF SILICON SINGLE CRYSTALS AND THEIR THERMAL COEFFICIENTS [J].

MCSKIMIN, HJ ;

BOND, WL ;

BUEHLER, E ;

TEAL, GK .

PHYSICAL REVIEW, 1951, 83 (05) :1080-1080

[7]

PRINCE M, COMMUNICATION

[8] MOBILITIES OF ELECTRONS IN HIGH ELECTRIC FIELDS [J].

RYDER, EJ ;

SHOCKLEY, W .

PHYSICAL REVIEW, 1951, 81 (01) :139-140

[9] HOT ELECTRONS IN GERMANIUM AND OHMS LAW [J].

SHOCKLEY, W .

BELL SYSTEM TECHNICAL JOURNAL, 1951, 30 (04) :990-1034

[10]

SUHL H, 1950, PHYS REV, V78, P646

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