THE MOBILITY AND LIFE OF INJECTED HOLES AND ELECTRONS IN GERMANIUM

[1] THE TRANSISTOR, A SEMI-CONDUCTOR TRIODE [J]. PHYSICAL REVIEW, 1948, 74 (02): : 230 - 231

[2] PHYSICAL PRINCIPLES INVOLVED IN TRANSISTOR ACTION [J]. PHYSICAL REVIEW, 1949, 75 (08): : 1208 - 1225

[3] EFFECTS OF ELECTRICAL FORMING ON THE RECTIFYING BARRIERS OF N-GERMANIUM AND P-GERMANIUM TRANSISTORS [J]. PHYSICAL REVIEW, 1950, 77 (03): : 401 - 402

[4] GOUCHER FS, 1950, PHYS REV, V78, P646

[5] INVESTIGATION OF HOLE INJECTION IN TRANSISTOR ACTION [J]. PHYSICAL REVIEW, 1949, 75 (04): : 691 - 691

[6] THEORY OF TRANSIENT PHENOMENA IN THE TRANSPORT OF HOLES IN AN EXCESS SEMICONDUCTOR [J]. BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 401 - 427

[7] PEARSON, 1950, PHYS REV, V78, P295

[8] PEARSON, 1949, PHYS REV, V75, P344

[9] PEARSON, 1950, PHYS REV, V77, P809

[10] PEARSON GL, 1950, PHYS REV, V78, P646

[1] THE TRANSISTOR, A SEMI-CONDUCTOR TRIODE [J]. PHYSICAL REVIEW, 1948, 74 (02): : 230 - 231

[2] PHYSICAL PRINCIPLES INVOLVED IN TRANSISTOR ACTION [J]. PHYSICAL REVIEW, 1949, 75 (08): : 1208 - 1225

[3] EFFECTS OF ELECTRICAL FORMING ON THE RECTIFYING BARRIERS OF N-GERMANIUM AND P-GERMANIUM TRANSISTORS [J]. PHYSICAL REVIEW, 1950, 77 (03): : 401 - 402

[4] GOUCHER FS, 1950, PHYS REV, V78, P646

[5] INVESTIGATION OF HOLE INJECTION IN TRANSISTOR ACTION [J]. PHYSICAL REVIEW, 1949, 75 (04): : 691 - 691

[6] THEORY OF TRANSIENT PHENOMENA IN THE TRANSPORT OF HOLES IN AN EXCESS SEMICONDUCTOR [J]. BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 401 - 427

[7] PEARSON, 1950, PHYS REV, V78, P295

[8] PEARSON, 1949, PHYS REV, V75, P344

[9] PEARSON, 1950, PHYS REV, V77, P809

[10] PEARSON GL, 1950, PHYS REV, V78, P646