GERMANIUM-DOPED GALLIUM ARSENIDE

被引：97

作者：

ROSZTOCZY, FE

ERMANIS, F

HAYASHI, I

SCHWARTZ, B

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1970年 / 41卷 / 01期

关键词：

D O I：

10.1063/1.1658332

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：264 / +

页数：1

共 25 条

[1] ACCEPTOR BEHAVIOUR OF GERMANIUM IN GALLIUM ARSENIDE [J].

CONSTANT.C ;

PETRESCU.I .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (12) :2397-&

[2] OPTICAL ABSORPTION OF GALLIUM ARSENIDE IN RESTSTRAHLEN BAND [J].

FRAY, SJ ;

WILLIAMS, N ;

JOHNSON, FA ;

QUARRINGTON, JE .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 77 (493) :215-&

[3] DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE [J].

HALL, RN ;

RACETTE, JH .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :379-&

[4] EFFECT OF BAND SHAPES ON CARRIER DISTRIBUTION AT HIGH TEMPERATURE [J].

HAYASHI, I .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1968, QE 4 (04) :113-+

[5] HALL EFFECT STUDIES OF DOPED ZINC OXIDE SINGLE CRYSTALS [J].

HUTSON, AR .

PHYSICAL REVIEW, 1957, 108 (02) :222-230

[6] LUMINESCENCE DUE TO GE ACCEPTORS IN GAAS [J].

KRESSEL, H ;

HAWRYLO, FZ ;

LEFUR, P .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) :4059-+

[7] RADIATIVE RECOMBINATION IN MELT-GROWN N-TYPE GE-DOPED GAAS [J].

KRESSEL, H .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (11) :4383-&

[8] FREQUENCY SHIFT WITH TEMPERATURE AS EVIDENCE FOR DONOR-ACCEPTOR PAIR RECOMBINATION IN RELATIVELY PURE N-TYPE GAAS [J].

LEITE, RCC ;

DIGIOVANNI, AE .

PHYSICAL REVIEW, 1967, 153 (03) :841-+

[9] INFLUENCE OF ARSENIC PRESSURE ON THE DOPING OF GALLIUM ARSENIDE WITH GERMANIUM [J].

MCCALDIN, JO ;

HARADA, R .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (11) :2065-2066

[10] SI-DOPED AND GE-DOPED GAAS P-N JUNCTIONS [J].

MORIIZUMI, T ;

TAKAHASHI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (03) :348-+

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