EFFECT OF BAND SHAPES ON CARRIER DISTRIBUTION AT HIGH TEMPERATURE

[1] EVIDENCE OF REFRIGERATING ACTION BY MEANS OF PHOTON EMISSION IN SEMICONDUCTOR DIODES [J]. PHYSICAL REVIEW, 1964, 133 (1A): : A316 - A318

[2] TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT IN GAAS LASERS ( EPITAXIAL HEAVIER DOPED UNITS FOR LOW THRESHOLD )4 TIMES 104 A/CM2 ) AT 300 DEGREES K 4.2 DEGREES TO 300 DEGREES K E/T ) [J]. APPLIED PHYSICS LETTERS, 1964, 5 (09) : 174 - &

[3] ELISEEV PG, 1967, SOV PHYS SEMICOND+, V1, P795

[4] ELISEEV PG, 1967, SOV PHYS SEMICOND+, V1, P797

[5] IMPURITY-BAND TAILS IN HIGH-DENSITY LIMIT .I. MINIMUM COUNTING METHODS [J]. PHYSICAL REVIEW, 1966, 148 (02): : 722 - +

[6] THOMAS-FERMI APPROACH TO IMPURE SEMICONDUCTOR BAND STRUCTURE [J]. PHYSICAL REVIEW, 1963, 131 (01): : 79 - &

[7] SPONTANEOUS + STIMULATED RECOMBINATION RADIATION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (2A): : A553 - &

[8] GAUSSIAN IMPURITY BANDS IN GaAs [J]. SOLID STATE COMMUNICATIONS, 1965, 3 (05) : 105 - 108

[9] EDGE ABSORPTION AND PHOTOLUMINESCENCE IN CLOSELY COMPENSATED GaAs [J]. SOLID STATE COMMUNICATIONS, 1965, 3 (01) : 9 - 13

[10] BAND-FILLING MODEL FOR GAAS INJECTION LUMINESCENCE [J]. APPLIED PHYSICS LETTERS, 1963, 2 (09) : 182 - 184

[1] EVIDENCE OF REFRIGERATING ACTION BY MEANS OF PHOTON EMISSION IN SEMICONDUCTOR DIODES [J]. PHYSICAL REVIEW, 1964, 133 (1A): : A316 - A318

[2] TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT IN GAAS LASERS ( EPITAXIAL HEAVIER DOPED UNITS FOR LOW THRESHOLD )4 TIMES 104 A/CM2 ) AT 300 DEGREES K 4.2 DEGREES TO 300 DEGREES K E/T ) [J]. APPLIED PHYSICS LETTERS, 1964, 5 (09) : 174 - &

[3] ELISEEV PG, 1967, SOV PHYS SEMICOND+, V1, P795

[4] ELISEEV PG, 1967, SOV PHYS SEMICOND+, V1, P797

[5] IMPURITY-BAND TAILS IN HIGH-DENSITY LIMIT .I. MINIMUM COUNTING METHODS [J]. PHYSICAL REVIEW, 1966, 148 (02): : 722 - +

[6] THOMAS-FERMI APPROACH TO IMPURE SEMICONDUCTOR BAND STRUCTURE [J]. PHYSICAL REVIEW, 1963, 131 (01): : 79 - &

[7] SPONTANEOUS + STIMULATED RECOMBINATION RADIATION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (2A): : A553 - &

[8] GAUSSIAN IMPURITY BANDS IN GaAs [J]. SOLID STATE COMMUNICATIONS, 1965, 3 (05) : 105 - 108

[9] EDGE ABSORPTION AND PHOTOLUMINESCENCE IN CLOSELY COMPENSATED GaAs [J]. SOLID STATE COMMUNICATIONS, 1965, 3 (01) : 9 - 13

[10] BAND-FILLING MODEL FOR GAAS INJECTION LUMINESCENCE [J]. APPLIED PHYSICS LETTERS, 1963, 2 (09) : 182 - 184