SPONTANEOUS + STIMULATED RECOMBINATION RADIATION IN SEMICONDUCTORS

被引：529

作者：

LASHER, G

STERN, F

机构：

来源：

PHYSICAL REVIEW A-GENERAL PHYSICS | 1964年 / 133卷 / 2A期

关键词：

D O I：

10.1103/PhysRev.133.A553

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：A553 / &

共 64 条

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[6]

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[8]

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[10] EFFECT OF TEMPERATURE ON PROPERTIES OF GAAS LASER [J].

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PROCEEDINGS OF THE IEEE, 1963, 51 (06) :947-&

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