ELECTRON-HOLE AND ELECTRON-IMPURITY BAND TUNNELING IN GAAS LUMINESCENT JUNCTIONS

被引：74

作者：

ARCHER, RJ

LEITE, RC

YARIV, A

PORTO, SPS

WHELAN, JM

机构：

来源：

关键词：

D O I：

10.1103/PhysRevLett.10.483

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：483 / &

共 8 条

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LOGAN, RA
FELDMANN, WL
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[2] CHYNOWETH AG, PRIVATE COMMUNICATIO
[3] GERSHENZON M, 1963, B AM PHYS SOC, V8, P202
[4] KANE EO, PRIVATE COMMUNICATIO
[5] KELDYSH LV, 1958, SOV PHYS JETP-USSR, V7, P665
[6] KELDYSH LV, 1958, ZH EKSP TEOR FIZ, V34, P962
[7] TUNNELING-ASSISTED PHOTON EMISSION IN GALLIUM ARSENIDE PN JUNCTIONS
PANKOVE, JI
[J]. PHYSICAL REVIEW LETTERS, 1962, 9 (07) : 283 - &
[8] DEGENERATE GERMANIUM .2. BAND GAP AND CARRIER RECOMBINATION
SOMMERS, HS
[J]. PHYSICAL REVIEW, 1961, 124 (04): : 1101 - &