TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT IN GAAS LASERS ( EPITAXIAL HEAVIER DOPED UNITS FOR LOW THRESHOLD )4 TIMES 104 A/CM2 ) AT 300 DEGREES K 4.2 DEGREES TO 300 DEGREES K E/T )

被引：84

作者：

DOUSMANIS, GC

STAEBLER, DL

NELSON, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1964年 / 5卷 / 09期

关键词：

D O I：

10.1063/1.1754104

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：174 / &

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共 6 条

[1] EFFECT OF TEMPERATURE ON PROPERTIES OF GAAS LASER
BURNS, G
DILL, FH
NATHAN, MI
[J]. PROCEEDINGS OF THE IEEE, 1963, 51 (06) : 947 - &
[2] EFFECT OF DOPING ON FREQUENCY OF STIMULATED AND INCOHERENT EMISSION IN GAAS DIODES
DOUSMANIS, GC
MUELLER, CW
NELSON, H
[J]. APPLIED PHYSICS LETTERS, 1963, 3 (08) : 133 - 135
[3] EVIDENCE OF REFRIGERATING ACTION BY MEANS OF PHOTON EMISSION IN SEMICONDUCTOR DIODES
DOUSMANIS, GC
PETZINGER, KG
NELSON, H
MUELLER, CW
[J]. PHYSICAL REVIEW, 1964, 133 (1A): : A316 - A318
[4] GALLAGHER CC, 1964, P IEEE, V52, P719
[5] NELSON H, 1963, RCA REV, V24, P603
[6] LIGHT EMISSION AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL GAAS LASERS AND TUNNEL DIODES
WINOGRADOFF, NN
KESSLER, HK
[J]. SOLID STATE COMMUNICATIONS, 1964, 2 (04) : 119 - 122