EFFECT OF DOPING ON FREQUENCY OF STIMULATED AND INCOHERENT EMISSION IN GAAS DIODES

被引：31

作者：

DOUSMANIS, GC

MUELLER, CW

NELSON, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1963年 / 3卷 / 08期

关键词：

D O I：

10.1063/1.1753901

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：133 / 135

页数：3

共 9 条

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LEITE, RC ;

YARIV, A ;

PORTO, SPS ;

WHELAN, JM .

PHYSICAL REVIEW LETTERS, 1963, 10 (11) :483-&

[2] EFFECT OF DOPING ON THE EMISSION PEAK AND THE ABSORPTION EDGE OF GAAS [J].

BRAUNSTEIN, R ;

PANKOVE, JI ;

NELSON, H .

APPLIED PHYSICS LETTERS, 1963, 3 (02) :31-33

[3]

DITRICK NH, 1960, RCA ENG, V6, P20

[4] THOMAS-FERMI APPROACH TO IMPURE SEMICONDUCTOR BAND STRUCTURE [J].

KANE, EO .

PHYSICAL REVIEW, 1963, 131 (01) :79-&

[5] ONE-DIMENSIONAL IMPURITY BANDS [J].

LAX, M ;

PHILLIPS, JC .

PHYSICAL REVIEW, 1958, 110 (01) :41-49

[6] RECOMBINATION RADIATION IN GAAS BY OPTICAL AND ELECTRICAL INJECTION [J].

NATHAN, MI ;

BURNS, G .

APPLIED PHYSICS LETTERS, 1962, 1 (04) :89-90

[7] RECOMBINATION RADIATION IN GAAS [J].

NATHAN, MI ;

BURNS, G .

PHYSICAL REVIEW, 1963, 129 (01) :125-&

[8] BAND-FILLING MODEL FOR GAAS INJECTION LUMINESCENCE [J].

NELSON, DF ;

GERSHENZON, M ;

ASHKIN, A .

APPLIED PHYSICS LETTERS, 1963, 2 (09) :182-184

[9] TUNNELING-ASSISTED PHOTON EMISSION IN GALLIUM ARSENIDE PN JUNCTIONS [J].

PANKOVE, JI .

PHYSICAL REVIEW LETTERS, 1962, 9 (07) :283-&

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