A LOW-THRESHOLD ROOM-TEMPERATURE INJECTION LASER

被引：81

作者：

HAYASHI, I

PANISH, MB

FOY, PW

机构：

[1] Bell Telephone Labs., Inc., Murray Hill, N.J.

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1969年 / QE 5卷 / 04期

关键词：

D O I：

10.1109/JQE.1969.1075759

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：211 / &

共 13 条

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[2] TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT IN GAAS LASERS ( EPITAXIAL HEAVIER DOPED UNITS FOR LOW THRESHOLD )4 TIMES 104 A/CM2 ) AT 300 DEGREES K 4.2 DEGREES TO 300 DEGREES K E/T ) [J].

DOUSMANIS, GC ;

STAEBLER, DL ;

NELSON, H .

APPLIED PHYSICS LETTERS, 1964, 5 (09) :174-&

[3]

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[4]

HAYASHI I, 1968, IEEE J QUANT ELECTRO, VQE 4, P113

[5]

HAYASHI I, IN PRESS

[6] A PROPOSED CLASS OF HETEROJUNCTION INJECTION LASERS [J].

KROEMER, H .

PROCEEDINGS OF THE IEEE, 1963, 51 (12) :1782-&

[7]

Lash G., 1964, PHYS REV A, V133, P553

[8]

LESKOVICH VI, 1968, SOV PHYS SEMICOND+, V1, P1201

[9] HIGH-EFFICIENCY INJECTION LASER AT ROOM TEMPERATURE [J].

NELSON, H ;

DOUSMANIS, GC ;

HAWRYLO, F ;

RENO, C ;

PANKOVE, JI .

PROCEEDINGS OF THE IEEE, 1964, 52 (11) :1360-+

[10]

PANISH MB, 1969, IEEE J QUANTUM ELECT, VQE 5, P210

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