EXCITONIC PROPERTIES OF ZN1-XCDXSE/ZNSE QUANTUM-WELL STRUCTURES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：5

作者：

OHKI, A

ANDO, K

ZEMBUTSU, S

机构：

[1] NTT Opto-Electronics Laboratories, Ibaraki-ken, 319-11, Tokai

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1993年 / 22卷 / 05期

关键词：

EXCITON; METALORGANIC VAPOR PHASE EPITAXY; OPTICAL PUMPING; QUANTUM WELL; ZNCDSE; ZNSE;

D O I：

10.1007/BF02661626

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents optical characteristics of Zn0.82Cd0.18Se/ZnSe single quantum well (SQW) structures grown by a low-pressure metalorganic vapor-phase epitaxy. The excitonic optical absorption and emission properties are studied by electroreflectance, photocurrent, and photoluminescence (PL) spectrum measurements under controlled-high electric fields. The PL spectrum shows a considerable red shift (up to 20 meV) against the ground state of the heavy-hole exciton in the SQW, and is quite insensitive to the applied high electric field (>10(4)V/CM). The results have indicated that the exciton responsible for the photon emission process (spontaneous/stimulated) is different from the ground state of the heavy-hole exciton, which is responsible for the photon absorption process.

引用

页码：529 / 535

页数：7

共 19 条

[1] ENERGY BAND-GAP SHIFT WITH ELASTIC STRAIN IN GAXIN1-XP EPITAXIAL LAYERS ON (001) GAAS SUBSTRATES [J].