BLUE-GREEN LASER-DIODES

被引：1552

作者：

HAASE, MA

QIU, J

DEPUYDT, JM

CHENG, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 11期

关键词：

D O I：

10.1063/1.105472

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The first laser diodes fabricated from wide-band-gap II-VI semiconductors are demonstrated. These devices emit coherent light at a wavelength of 490 nm from a ZnSe-based single-quantum-well structure under pulsed current injection at 77 K. This is the shortest wavelength ever generated by a semiconductor laser diode.

引用

页码：1272 / 1274

页数：3

共 21 条

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[4] GROWTH OF P-TYPE ZNSE-LI BY MOLECULAR-BEAM EPITAXY
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[7] ELECTRICAL CHARACTERIZATION OF P-TYPE ZNSE
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[8] LASER ACTION IN THE BLUE-GREEN FROM OPTICALLY PUMPED (ZN,CD)SE/ZNSE SINGLE QUANTUM-WELL STRUCTURES
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[9] CHARACTERIZATION OF P-TYPE ZNSE
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[10] KURGIN J, 1987, J APPL PHYS, V61, P1606

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