GROWTH OF PARA-TYPE AND NORMAL-TYPE ZNSE BY MOLECULAR-BEAM EPITAXY

被引：58

作者：

CHENG, H

DEPUYDT, JM

POTTS, JE

HAASE, MA

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(89)90455-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：512 / 516

页数：5

共 9 条

[1] GROWTH OF P-TYPE ZNSE-LI BY MOLECULAR-BEAM EPITAXY [J].

CHENG, H ;

DEPUYDT, JM ;

POTTS, JE ;

SMITH, TL .

APPLIED PHYSICS LETTERS, 1988, 52 (02) :147-149

[2]

CHENG H, 1987, SPIE, V796, P91

[3]

DELLAPORTA P, 1968, SEP IEEE C TUB TECHN

[4] DETECTION AND CONTROL OF IMPURITY INCORPORATION IN MBE-GROWN ZNSE [J].

DEPUYDT, JM ;

SMITH, TL ;

POTTS, JE ;

CHENG, H ;

MOHAPATRA, SK .

JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :318-323

[5] PHOTOLUMINESCENCE PROPERTIES OF NITROGEN-DOPED ZNSE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY WITH LOW-ENERGY ION DOPING [J].

MITSUYU, T ;

OHKAWA, K ;

YAMAZAKI, O .

APPLIED PHYSICS LETTERS, 1986, 49 (20) :1348-1350

[6]

OHKAWA K, 1986, 18TH C SOL STAT DEV, P635

[7]

YAO T, 1984, 13TH P INT C DEF SEM, P1221

[8] METALORGANIC VAPOR-PHASE EPITAXY OF LOW-RESISTIVITY P-TYPE ZNSE [J].

YASUDA, T ;

MITSUISHI, I ;

KUKIMOTO, H .

APPLIED PHYSICS LETTERS, 1988, 52 (01) :57-59

[9] GROWTH OF UNDOPED, HIGH-PURITY, HIGH-RESISTIVITY ZNSE LAYERS BY MOLECULAR-BEAM EPITAXY [J].

YONEDA, K ;

HISHIDA, Y ;

TODA, T ;

ISHII, H ;

NIINA, T .

APPLIED PHYSICS LETTERS, 1984, 45 (12) :1300-1302

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