GROWTH OF UNDOPED, HIGH-PURITY, HIGH-RESISTIVITY ZNSE LAYERS BY MOLECULAR-BEAM EPITAXY

被引：54

作者：

YONEDA, K

HISHIDA, Y

TODA, T

ISHII, H

NIINA, T

机构：

[1] Sanyo Electric Co, Research Cent,, Hirakata, Jpn, Sanyo Electric Co, Research Cent, Hirakata, Jpn

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 12期

关键词：

D O I：

10.1063/1.95126

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1300 / 1302

页数：3

共 9 条

[1] IONIZATION-ENERGY OF THE SHALLOW NITROGEN ACCEPTOR IN ZINC SELENIDE
DEAN, PJ
STUTIUS, W
NEUMARK, GF
FITZPATRICK, BJ
BHARGAVA, RN
[J]. PHYSICAL REVIEW B, 1983, 27 (04) : 2419 - 2428
[2] DONOR BOUND-EXCITON EXCITED-STATES IN ZINC SELENIDE
DEAN, PJ
HERBERT, DC
WERKHOVEN, CJ
FITZPATRICK, BJ
BHARGAVA, RN
[J]. PHYSICAL REVIEW B, 1981, 23 (10): : 4888 - 4901
[3] THE OPTOELECTRONIC PROPERTIES OF DONORS IN ORGANO-METALLIC GROWN ZINC SELENIDE
DEAN, PJ
PITT, AD
WRIGHT, PJ
YOUNG, ML
COCKAYNE, B
[J]. PHYSICA B & C, 1983, 116 (1-3): : 508 - 513
[4] COMPARISON OF MOCVD-GROWN WITH CONVENTIONAL II-VI MATERIALS PARAMETERS FOR EL THIN-FILMS
DEAN, PJ
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1984, 81 (02): : 625 - 646
[5] DEPENDENCE OF THE CHARACTERISTICS OF ZNSE MBE GROWN ON GAAS AND GAP ON THERMAL-TREATMENT IN A VACUUM
NIINA, T
YONEDA, K
TODA, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (10) : 2099 - 2104
[6] ORGANOMETALLIC VAPOR-DEPOSITION OF EPITAXIAL ZNSE FILMS ON GAAS SUBSTRATES
STUTIUS, W
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 656 - 658
[7] PREPARATION OF LOW-RESISTIVITY N-TYPE ZNSE BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION
STUTIUS, W
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 352 - 354
[8] HIGH-QUALITY ZNSE THIN-FILMS GROWN BY MOLECULAR-BEAM EPITAXY
YAO, T
OGURA, M
MATSUOKA, S
MORISHITA, T
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (05) : 499 - 501
[9] MOLECULAR-BEAM EPITAXIAL-GROWTH OF LOW-RESISTIVITY ZNSE FILMS
YAO, T
MAKITA, Y
MAEKAWA, S
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 97 - 98

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