HIGH-QUALITY ZNSE THIN-FILMS GROWN BY MOLECULAR-BEAM EPITAXY

被引：72

作者：

YAO, T

OGURA, M

MATSUOKA, S

MORISHITA, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 05期

关键词：

D O I：

10.1063/1.94366

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：499 / 501

页数：3

共 18 条

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[8] THE ELECTRICAL-PROPERTIES AND IMPURITY PROFILES OF ZNSE FILMS ON GAAS AND OF GALLIUM-DIFFUSED ZNSE SINGLE-CRYSTALS [J].

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