THE ELECTRICAL-PROPERTIES AND IMPURITY PROFILES OF ZNSE FILMS ON GAAS AND OF GALLIUM-DIFFUSED ZNSE SINGLE-CRYSTALS

[1] CARRIER MOBILITY AND SHALLOW IMPURITY STATES IN ZNSE AND ZNTE [J]. PHYSICAL REVIEW, 1963, 130 (01): : 81 - +

[2] HIGH ELECTRON MOBILITY IN ZINC SELENIDE THROUGH LOW-TEMPERATURE ANNEALING [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (03) : 1204 - &

[3] BJERKELAND H, 1972, PHYS NORV, V6, P139

[4] DEVLIN SS, 1967, PHYSICS CHEM 2 6 COM

[5] EPITAXY OF ZNSE ON GE GAAS AND ZNSE BY AN HCL CLOSE-SPACED TRANSPORT PROCESS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (06) : 843 - &

[6] HUTCHINS GA, 1974, CHARACTERISATION SOL, pCH18

[7] Johannson N. G. E., 1970, SOLID STATE ELECTRON, V13, P317, DOI 10.1016/0038-1101(70)90183-8

[8] MOLECULAR-BEAM EPITAXIAL-GROWTH OF ZNTE AND ZNSE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (04) : 937 - 943

[9] ELECTRON EFFECTIVE MASS IN ZNSE [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) : 1879 - +

[10] MILNES AG, 1972, HETEROJUNCTIONS META, pCH5

[1] CARRIER MOBILITY AND SHALLOW IMPURITY STATES IN ZNSE AND ZNTE [J]. PHYSICAL REVIEW, 1963, 130 (01): : 81 - +

[2] HIGH ELECTRON MOBILITY IN ZINC SELENIDE THROUGH LOW-TEMPERATURE ANNEALING [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (03) : 1204 - &

[3] BJERKELAND H, 1972, PHYS NORV, V6, P139

[4] DEVLIN SS, 1967, PHYSICS CHEM 2 6 COM

[5] EPITAXY OF ZNSE ON GE GAAS AND ZNSE BY AN HCL CLOSE-SPACED TRANSPORT PROCESS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (06) : 843 - &

[6] HUTCHINS GA, 1974, CHARACTERISATION SOL, pCH18

[7] Johannson N. G. E., 1970, SOLID STATE ELECTRON, V13, P317, DOI 10.1016/0038-1101(70)90183-8

[8] MOLECULAR-BEAM EPITAXIAL-GROWTH OF ZNTE AND ZNSE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (04) : 937 - 943

[9] ELECTRON EFFECTIVE MASS IN ZNSE [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) : 1879 - +

[10] MILNES AG, 1972, HETEROJUNCTIONS META, pCH5