MOLECULAR-BEAM EPITAXIAL-GROWTH OF ZNTE AND ZNSE

[1] MOBILITY OF HOLES AND INTERACTION BETWEEN DEFECTS IN ZNTE [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (11) : 4421 - &

[2] PARTIAL PRESSURES OF ZN AND TE2 OVER ZNTE UP TO 917 DEGREES C [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (09) : 1274 - &

[3] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[4] MIRROR ABSORPTION AND FLUORESCENCE IN ZNTE [J]. PHYSICAL REVIEW LETTERS, 1962, 8 (10) : 391 - &

[5] PHOTOELECTRONIC PROPERTIES OF P-ZNTE [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (04) : 1708 - 1718

[6] PHOTOLUMINESCENCE OF DEFECT-EXCITON COMPLEXES IN 2-6 COMPOUNDS [J]. PHYSICAL REVIEW LETTERS, 1965, 14 (03) : 64 - &

[7] GROWTH AND STRUCTURE OF EPITAXIAL-FILMS AND HETEROJUNCTIONS OF II-VI COMPOUNDS [J]. THIN SOLID FILMS, 1974, 24 (01) : 1 - 53

[8] HONIG RE, 1969, RCA REV, V30, P285

[9] MARPLE DTF, 1967, P INT C 26 SEMICONDU, P315

[10] IONIZED BEAM DOPING IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XAS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) : 5710 - 5713

[1] MOBILITY OF HOLES AND INTERACTION BETWEEN DEFECTS IN ZNTE [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (11) : 4421 - &

[2] PARTIAL PRESSURES OF ZN AND TE2 OVER ZNTE UP TO 917 DEGREES C [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (09) : 1274 - &

[3] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[4] MIRROR ABSORPTION AND FLUORESCENCE IN ZNTE [J]. PHYSICAL REVIEW LETTERS, 1962, 8 (10) : 391 - &

[5] PHOTOELECTRONIC PROPERTIES OF P-ZNTE [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (04) : 1708 - 1718

[6] PHOTOLUMINESCENCE OF DEFECT-EXCITON COMPLEXES IN 2-6 COMPOUNDS [J]. PHYSICAL REVIEW LETTERS, 1965, 14 (03) : 64 - &

[7] GROWTH AND STRUCTURE OF EPITAXIAL-FILMS AND HETEROJUNCTIONS OF II-VI COMPOUNDS [J]. THIN SOLID FILMS, 1974, 24 (01) : 1 - 53

[8] HONIG RE, 1969, RCA REV, V30, P285

[9] MARPLE DTF, 1967, P INT C 26 SEMICONDU, P315

[10] IONIZED BEAM DOPING IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XAS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) : 5710 - 5713