IONIZED BEAM DOPING IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XAS

[1] ADSORPTION OF ZN ON GAAS [J]. SURFACE SCIENCE, 1973, 38 (02) : 394 - 412

[2] CASEY HC, 1968, T METALL SOC AIME, V242, P406

[3] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[4] P-N JUNCTION FORMATION DURING MOLECULAR-BEAM EPITAXY OF GE-DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4422 - &

[5] MAGNESIUM-DOPED GAAS AND ALXGA1-XAS BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) : 5118 - 5123

[6] COMPARISON OF ZN-DOPED GAAS LAYERS PREPARED BY LIQUID-PHASE AND VAPOR-PHASE TECHNIQUES, INCLUDING DIFFUSION LENGTHS AND PHOTOLUMINESCENCE [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) : 3500 - 3508

[7] BERYLLIUM DOPING AND DIFFUSION IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XAS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 1278 - 1287

[8] Ilegems M., 1975, J APPL PHYS, V46, P3059

[9] SELF-COMPENSATION LIMITED CONDUCTIVITY IN BINARY SEMICONDUCTORS .1. THEORY [J]. PHYSICAL REVIEW, 1964, 134 (4A): : 1073 - +

[10] MOLECULAR-BEAM EPITAXY WITH IONIZED BEAM DOPING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 : 443 - 449

[1] ADSORPTION OF ZN ON GAAS [J]. SURFACE SCIENCE, 1973, 38 (02) : 394 - 412

[2] CASEY HC, 1968, T METALL SOC AIME, V242, P406

[3] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[4] P-N JUNCTION FORMATION DURING MOLECULAR-BEAM EPITAXY OF GE-DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4422 - &

[5] MAGNESIUM-DOPED GAAS AND ALXGA1-XAS BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) : 5118 - 5123

[6] COMPARISON OF ZN-DOPED GAAS LAYERS PREPARED BY LIQUID-PHASE AND VAPOR-PHASE TECHNIQUES, INCLUDING DIFFUSION LENGTHS AND PHOTOLUMINESCENCE [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) : 3500 - 3508

[7] BERYLLIUM DOPING AND DIFFUSION IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XAS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 1278 - 1287

[8] Ilegems M., 1975, J APPL PHYS, V46, P3059

[9] SELF-COMPENSATION LIMITED CONDUCTIVITY IN BINARY SEMICONDUCTORS .1. THEORY [J]. PHYSICAL REVIEW, 1964, 134 (4A): : 1073 - +

[10] MOLECULAR-BEAM EPITAXY WITH IONIZED BEAM DOPING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 : 443 - 449