COMPARISON OF ZN-DOPED GAAS LAYERS PREPARED BY LIQUID-PHASE AND VAPOR-PHASE TECHNIQUES, INCLUDING DIFFUSION LENGTHS AND PHOTOLUMINESCENCE

被引：38

作者：

ETTENBERG, M ^{[1
]}

NUESE, CJ ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 08期

关键词：

D O I：

10.1063/1.322076

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3500 / 3508

页数：9

共 44 条

[1] MICROSTRUCTURAL EFFECTS ON MINORITY-CARRIER DIFFUSION LENGTH IN EPITAXIAL GAAS
ABRAHAMS, MS
BUIOCCHI, CJ
WILLIAMS, BF
[J]. APPLIED PHYSICS LETTERS, 1971, 18 (06) : 220 - &
[2] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS
ABRAHAMS, MS
BUIOCCHI, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2855 - &
[3] ELECTRON LIFETIME AND DIFFUSION CONSTANT IN GERMANIUM-DOPED GALLIUM-ARSENIDE
ACKET, GA
NIJMAN, W
LAM, HT
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3033 - 3040
[4] ELECTRON DIFFUSION LENGTH IN SOLUTION-GROWN GAAS-GE+
ASHLEY, KL
CARR, DL
ROMANOMO.R
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (01) : 23 - 25
[5] DIFFUSION LENGTHS OF ELECTRONS AND HOLES IN GAAS
AUKERMAN, LW
MILLEA, MF
MCCOLL, M
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) : 685 - &
[6] TEMPERATURE VARIATION OF ELECTRON DIFFUSION LENGTH AND INTERNAL QUANTUM EFFICIENCY IN GAAS ELECTROLUMINESCENT DIODES
BAHRAMAN, A
OLDHAM, WG
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (08) : 907 - +
[7] BEBB HB, 1972, SEMICONDUCT SEMIMET, V8, P182
[8] VARIATION OF MINORITY-CARRIER DIFFUSION LENGTH WITH CARRIER CONCENTRATION IN GAAS LIQUID-PHASE EPITAXIAL LAYERS
CASEY, HC
MILLER, BI
PINKAS, E
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) : 1281 - 1287
[9] SURFACE STRUCTURES AND PHOTOLUMINESCENCE OF MOLECULAR BEAM EPITAXIAL FILMS OF GAAS
CHO, AY
HAYASHI, I
[J]. SOLID-STATE ELECTRONICS, 1971, 14 (02) : 125 - &
[10] RADIATIVE RECOMBINATION FROM GAAS DIRECTLY EXCITED BY ELECTRON BEAMS
CUSANO, DA
[J]. SOLID STATE COMMUNICATIONS, 1964, 2 (11) : 353 - 358

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