SURFACE STRUCTURES AND PHOTOLUMINESCENCE OF MOLECULAR BEAM EPITAXIAL FILMS OF GAAS

被引：76

作者：

CHO, AY

HAYASHI, I

机构：

来源：

SOLID-STATE ELECTRONICS | 1971年 / 14卷 / 02期

关键词：

D O I：

10.1016/0038-1101(71)90087-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：125 / &

相关论文

共 20 条

[1] ARTHUR JR, 1969, P C STRUCTURE CHEM S, P46
[2] EPITAXIAL GROWTH OF GALLIUM PHOSPHIDE ON CLEAVED AND POLISHED (111) CALCIUM FLUORIDE
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (02) : 782 - &
[3] MORPHOLOGY OF EPITAXIAL GROWTH OF GAAS BY A MOLECULAR BEAM METHOD - OBSERVATION OF SURFACE STRUCTURES
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 2780 - &
[4] EPITAXY BY PERIODIC ANNEALING
CHO, AY
[J]. SURFACE SCIENCE, 1969, 17 (02) : 494 - &
[5] DANGLING BONDS IN III-V COMPOUNDS
GATOS, HC
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (07) : 1232 - &
[6] CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS
GATOS, HC
LAVINE, MC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (05) : 427 - 433
[7] GATOS HC, 1967, SURFACES INTERFACES, P3
[8] SURFACE STRUCTURES AND PROPERTIES OF DIAMOND-STRUCTURE SEMICONDUCTORS
HANEMAN, D
[J]. PHYSICAL REVIEW, 1961, 121 (04): : 1093 - &
[9] GAAS-GAXAL1-XAS HETEROSTRUCTURE INJECTION LASERS WHICH EXHIBIT LOW THRESHOLDS AT ROOM TEMPERATURE
HAYASHI, I
PANISH, MB
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) : 150 - &
[10] HAYASHI I, 1969, IEEE J QUANTUM ELECT, VQE 5, P211