EPITAXIAL GROWTH OF GALLIUM PHOSPHIDE ON CLEAVED AND POLISHED (111) CALCIUM FLUORIDE

被引：39

作者：

CHO, AY

机构：

来源：

关键词：

D O I：

10.1063/1.1658749

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：782 / &

共 8 条

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[2]

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[5]

MACRAE AU, 1966, SEMICONDUCTORS SEMIM, V2, P134

[6]

MARCUS RB, 1969, PHYSICAL MEASUREMENT, P110

[7] PHASE EQUILIBRIA IN GAAS AND GAP SYSTEMS [J].

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[8]

Washburn E.W., 1933, INT CRITICAL TABLES