INTERACTION OF GA AND AS2 MOLECULAR BEAMS WITH GAAS SURFACES

[1] GALLIUM ARSENIDE SURFACE STRUCTURE AND REACTION KINETICS - FIELD EMISSION MICROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) : 3057 - &

[2] VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) : 2257 - &

[3] ARTHUR JR, 1967, 27 C PHYS EL

[4] STRUCTURAL + OPTICAL CHARACTERISTICS OF THIN GAAS FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (07) : 2203 - &

[5] DAVEY JE, 1966, J APPL PHYS, V37, P1507

[6] GUNTHER KG, 1958, Z NATURFORSCH PT A, V13, P1081

[7] GUNTHER KG, 1962, COMPOUND SEMICONDUCT, V1, P313

[8] HUDOCK P, 1967, J ELECTROCHEM SOC, V114, pC64

[9] MEAN ADSORPTION LIFETIME OF RB ON ETCHED TUNGSTEN SINGLE CRYSTALS - IONS [J]. PHYSICAL REVIEW, 1959, 113 (04): : 1029 - 1035

[10] KAMINSKY M, 1966, ANN D PHYSIK, V7, P53

[1] GALLIUM ARSENIDE SURFACE STRUCTURE AND REACTION KINETICS - FIELD EMISSION MICROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) : 3057 - &

[2] VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) : 2257 - &

[3] ARTHUR JR, 1967, 27 C PHYS EL

[4] STRUCTURAL + OPTICAL CHARACTERISTICS OF THIN GAAS FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (07) : 2203 - &

[5] DAVEY JE, 1966, J APPL PHYS, V37, P1507

[6] GUNTHER KG, 1958, Z NATURFORSCH PT A, V13, P1081

[7] GUNTHER KG, 1962, COMPOUND SEMICONDUCT, V1, P313

[8] HUDOCK P, 1967, J ELECTROCHEM SOC, V114, pC64

[9] MEAN ADSORPTION LIFETIME OF RB ON ETCHED TUNGSTEN SINGLE CRYSTALS - IONS [J]. PHYSICAL REVIEW, 1959, 113 (04): : 1029 - 1035

[10] KAMINSKY M, 1966, ANN D PHYSIK, V7, P53