共 45 条
- [1] AUKERMAN LW, 1962, NATIONAL S SPACE ENV
- [2] RECOMBINATION RADIATION IN GAAS[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (01) : 178 - &BLACK, JMAYBURG, SLOCKWOOD, H
- [3] PROPERTIES OF HIGH-RESISTIVITY GALLIUM ARSENIDE COMPENSATED WITH DIFFUSED COPPER[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (09) : 1666 - &BLANC, JMACDONALD, HEBUBE, RH
- [4] EVIDENCE FOR EXISTENCE OF HIGH CONCENTRATIONS OF LATTICE DEFECTS IN GAAS[J]. PHYSICAL REVIEW LETTERS, 1962, 9 (06) : 252 - &BLANC, JWEISBERG, LRBUBE, RH
- [5] THE OPTICAL CONSTANTS OF GERMANIUM IN THE INFRA-RED AND VISIBLE[J]. PHYSICAL REVIEW, 1949, 75 (11): : 1705 - 1710BRATTAIN, WHBRIGGS, HB
- [6] INTERVALENCE BAND TRANSITIONS IN GALLIUM ARSENIDE[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 280 - 282BRAUNSTEIN, R
- [7] VALENCE BAND STRUCTURE OF III-V COMPOUNDS[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (OCT) : 1423 - &BRAUNSTEIN, RKANE, EO
- [8] EFFECT OF DOPING ON THE EMISSION PEAK AND THE ABSORPTION EDGE OF GAAS[J]. APPLIED PHYSICS LETTERS, 1963, 3 (02) : 31 - 33BRAUNSTEIN, RPANKOVE, JINELSON, H
- [9] PHOTOELECTRONIC ANALYSIS OF HIGH RESISTIVITY CRYSTALS - (A) GAAS, (B) SB2S3[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) : 315 - 322BUBE, RH
- [10] ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB[J]. PHYSICAL REVIEW, 1954, 93 (03): : 632 - 633BURSTEIN, E