EVIDENCE FOR EXISTENCE OF HIGH CONCENTRATIONS OF LATTICE DEFECTS IN GAAS

[1] PROPERTIES OF HIGH-RESISTIVITY GALLIUM ARSENIDE COMPENSATED WITH DIFFUSED COPPER [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (09) : 1666 - &

[2] BLANC J, 1962, B AM PHYS SOC, V7, P89

[3] Bube R. H., 1960, PHOTOCONDUCTIVITY SO, P292

[4] PHOTOELECTRONIC ANALYSIS OF HIGH RESISTIVITY CRYSTALS - (A) GAAS, (B) SB2S3 [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) : 315 - 322

[5] BUBE RH, 1960, PHOTOCONDUCTIVITY SO, P299

[6] APPARATUS FOR THE FLOATING-ZONE REFINING OF GALLIUM ARSENIDE [J]. JOURNAL OF SCIENTIFIC INSTRUMENTS, 1960, 37 (11): : 410 - 414

[7] ISOTOPIC AND OTHER TYPES OF THERMAL RESISTANCE IN GERMANIUM [J]. PHYSICAL REVIEW, 1958, 110 (03): : 773 - 775

[8] HILSUM C, 1961, SEMICONDUCTING III-V, P69

[9] ROSI FD, 1959, J PHYS CHEM SOLIDS, V10, P193

[10] WEISBERG LR, 1959, PROPERTIES ELEMENTAL, V5, P65

[1] PROPERTIES OF HIGH-RESISTIVITY GALLIUM ARSENIDE COMPENSATED WITH DIFFUSED COPPER [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (09) : 1666 - &

[2] BLANC J, 1962, B AM PHYS SOC, V7, P89

[3] Bube R. H., 1960, PHOTOCONDUCTIVITY SO, P292

[4] PHOTOELECTRONIC ANALYSIS OF HIGH RESISTIVITY CRYSTALS - (A) GAAS, (B) SB2S3 [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) : 315 - 322

[5] BUBE RH, 1960, PHOTOCONDUCTIVITY SO, P299

[6] APPARATUS FOR THE FLOATING-ZONE REFINING OF GALLIUM ARSENIDE [J]. JOURNAL OF SCIENTIFIC INSTRUMENTS, 1960, 37 (11): : 410 - 414

[7] ISOTOPIC AND OTHER TYPES OF THERMAL RESISTANCE IN GERMANIUM [J]. PHYSICAL REVIEW, 1958, 110 (03): : 773 - 775

[8] HILSUM C, 1961, SEMICONDUCTING III-V, P69

[9] ROSI FD, 1959, J PHYS CHEM SOLIDS, V10, P193

[10] WEISBERG LR, 1959, PROPERTIES ELEMENTAL, V5, P65