EPITAXY BY PERIODIC ANNEALING

[1] VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) : 2257 - &

[2] INTERACTION OF GA AND AS2 MOLECULAR BEAMS WITH GAAS SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) : 4032 - &

[3] GUNTHER KG, 1962, COMPOUND SEMICONDUCT, V1, P313

[4] HAYASHI I, 1969, IEEE J QUANTUM ELECT, VQE 5, P211

[5] PHASE EQUILIBRIA IN GAAS AND GAP SYSTEMS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (05) : 785 - &

[1] VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) : 2257 - &

[2] INTERACTION OF GA AND AS2 MOLECULAR BEAMS WITH GAAS SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) : 4032 - &

[3] GUNTHER KG, 1962, COMPOUND SEMICONDUCT, V1, P313

[4] HAYASHI I, 1969, IEEE J QUANTUM ELECT, VQE 5, P211

[5] PHASE EQUILIBRIA IN GAAS AND GAP SYSTEMS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (05) : 785 - &