MORPHOLOGY OF EPITAXIAL GROWTH OF GAAS BY A MOLECULAR BEAM METHOD - OBSERVATION OF SURFACE STRUCTURES

被引：261

作者：

CHO, AY

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1970年 / 41卷 / 07期

关键词：

D O I：

10.1063/1.1659315

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2780 / &

共 23 条

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[8] EPITAXIAL GROWTH AND OPTICAL EVALUATION OF GALLIUM PHOSPHIDE AND GALLIUM ARSENIDE THIN FILMS ON CALCIUM FLUORIDE SUBSTRATE [J].

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[10] ON NATURE OF SI(111) SURFACES [J].

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